Fermi Level Pinning at the Poly Si/ Metal Oxide Interface Fermi Level Pinning at the Poly Si/ Metal Oxide Interface,C. Hobbs,L. Fonseca,V. Dhandapani,S. Samavedam,B. Taylor,J. Grant,L. Dip,D. Triyoso,R. Hegde Edit Fermi Level Pinning at the Poly Si/ Metal Oxide Interface (Citations: 44) BibTex | C. Hobbs, , , ..
Presented By: Ashesh Jain Indian Institute of Technology, Delhi Feasible electrode metal for pmos: Pt and conducting metal oxide RuO ₂ Current roadmap predicts that poly- Si gate technology likely be phased out beyond the 70 nm node, after which a metal gate substitute ...
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004 971 Fermi-Level Pinning at the Poly “Fermi-level pinning at the poly-Si–Metal oxide interface,” in Symp. VLSI Tech. Dig., 2003, pp. 9–10. [2] S. Pidin, Y. Morisaki, Y. Sugita, T. Aiyama, K. Irino, T. Nakamura, and T. Sugii, “Low standby power CMOS with HfO gate oxide for 100-nm generation,”
한국물리학회 Fermi-Level Pinning at the Poly-Si/HfO 2 Interface Ranju Jung J. Korean Phys.Soc. 55,2501 [doi: 10.3938/jkps.55.2501 | PDF Download] The high threshold voltage in metal-oxide-semiconductor field effecttransistor (MOSFET) devices adopting hafnia for the ga
Interface Engineering for High-k Dielectrics ... high threshold voltages and (2) polysilicon (poly-Si) depletion. Researchers from Freescale Semiconductor together with the Kintech Lab team have investigated the role of the poly-Si–MeO ...
Fermi-level pinning at the polysilicon/metal oxide interface ... ABSTRACT We report here that Fermi pinning at the polysilicon/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate that ...
Polysilicon depletion effect - Wikipedia, the free encyclopedia Polysilicon depletion effect is the phenomenon in which unwanted variation of ... Proceedings International Symposium: VLSI Technology Systems and Applications. pp. ... "Fermi-level pinning at the polysilicon/metal oxide interface-Part I".
Nano-CMOS Gate Dielectric Engineering - 第 198 頁 - Google 圖書結果 ... and P. Tobin, Fermi level pinning at the poly-Si / metal oxide interface, VLSI ... MOSFETs through silicidation induced impurity segregation(SIIS), IEEE Int'l.
High-k Gate Dielectrics for CMOS Technology ... Rai, R., Hebert, L., Tseng, H., White, B., and Tobin, P. (2003) Fermi level pinning at the polySi/metal oxide interface. IEEE Symposium on VLSI Technology, p.
MICRO: Transistorama - MICRO Magazine Developing a systematic approach to metal gates and high-k dielectrics in ..... CC Hobb et al., “Fermi-Level Pinning at the Polysilicon/Metal-Oxide ... Generation Dual Metal CMOS” (paper presented at the International Conference on Integrated ...
